SIR466DP-T1-GE3 MOSFET Power Electronics High Performance Low Vce(sat) High Efficiency Switching
Description: The SIR466DP-T1-GE3 MOSFET is a high-voltage N-channel MOSFET designed to provide maximum efficiency in a wide range of applications. It features a low on-resistance of 4.0 ohms, low gate charge of 8.7 nC, and a high current handling capability of 30A. The wide body package provides improved thermal performance and reliability.
Features:
- Low On-Resistance: 4.0 ohms
- Low Gate Charge: 8.7 nC
- High Current Handling: 30A
- Wide Body Package for Improved Thermal Performance and Reliability
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